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| SMBTA42M NPN Silicon High-Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA92M (PNP) 4 5 3 2 1 VPW05980 Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance Type SMBTA42M Maximum Ratings Parameter Marking s1D 1=B Pin Configuration 2=C 3=E Package 4=n.c. 5 = C SCT595 Symbol VCEO VCBO VEBO IC IB 83 C Ptot Tj Tstg Value 300 300 6 500 100 1.5 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS mA W C 45 K/W 1 Nov-30-2001 SMBTA42M Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector-base cutoff current VCB = 200 V, TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics VBEsat VCEsat hFE IEBO ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 300 300 6 - - 100 20 100 V nA A nA - 25 40 40 - - 0.5 0.9 V Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% fT Ccb 50 - - 3 MHz pF 2 Nov-30-2001 SMBTA42M Total power dissipation Ptot = f(TS) DC current gain hFE = f (I C) VCE = 10V 1.8 10 3 5 h FE 10 2 5 SMBTA 42/43 EHP00844 mW 1.4 P tot 1.2 1 0.8 0.6 0.4 0.2 0 0 10 1 5 15 30 45 60 75 90 105 120 C 150 TS 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 C Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 2 10 3 K/W Ptotmax / PtotDC - RthJS 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Nov-30-2001 SMBTA42M Collector cutoff current ICBO = f (TA) VCB = 160V SMBTA 42/43 EHP00842 Collector current I C = f (VBE) VCE = 10 V SMBTA 42/43 EHP00843 10 4 nA 10 3 5 10 2 5 10 1 5 10 5 0 10 3 mA max C 10 2 5 CBO 10 1 typ 5 10 0 5 10 -1 0 50 100 TA C 150 10 -1 0 0.5 1.0 V BE V 1.5 4 Nov-30-2001 |
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